ITCH09080GX - High Power RF LDMOS FET

Innogration

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Datasheet Details

Part number	ITCH09080GX
Manufacturer	Innogration
File Size	547.48 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH09080GX-Innogration.pdf

ITCH09080GX Product details

Description

The ITCH09080GX is a 80-watt, unmatched LDMOS FETs, designed for Wide-band and Mobile radio applications with frequencies from HF to 1500MHz. Typical Class AB Performance (On Innogration fixture with device soldered): VDD = 28 Volts,Vgs=3.02V, IDQ = 450 mA, Pulse CW, Pulse Width =20us, Duty Cycle =10%.Frequency Gain (dB) P-1dB (W) D@P-1 (%) P

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage.

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Published: Aug 5, 2018 |