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ITCH16045A2E - High Power RF LDMOS FET

Download the ITCH16045A2E datasheet PDF. This datasheet also covers the ITCH16045A2 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical Performance (On

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 65 Vdc Gate.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITCH16045A2-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH16045A2E
Manufacturer Innogration
File Size 393.12 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16045A2E Datasheet

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Full PDF Text Transcription

Click to expand full text
Innogration (Suzhou) Co., Ltd. Document Number: ITCH16045A Preliminary Datasheet V2.0 1300-1700MHz, 45W, 28V High Power RF LDMOS FETs Description The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz. It can be used in Class AB/B and Class C for all typical modulation formats. ITCH16045A2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 50 mA, CW. Frequency Gp (dB) P-1dB (W ) D@P-1 (%) 1615 MHz 20 43 64.
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