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Innogration (Suzhou) Co., Ltd.
Document Number: ITCH16180B4 Product Datasheet V2.0
1300MHz-1600MHz, 180W, 28V High Power RF LDMOS FETs
Description
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network.
ITCH16180B4
Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Frequency Gp (dB)
P-1dB (dBm)
D@P-1 (%)
P-3dB (dBm)
D@P-3 (%)
1447 MHz
19.9
49.1
54.8
50.1
57.9
1457 MHz
20.0
48.8
54.5
49.8
57.
ITCH16180B4E Datasheet
