ITCH16180B2 - High Power RF LDMOS FET

Innogration

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Datasheet Details

Part number	ITCH16180B2
Manufacturer	Innogration
File Size	1.01 MB
Description	High Power RF LDMOS FET
Datasheet	ITCH16180B2-Innogration.pdf

ITCH16180B2 Product details

Description

The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc VD.

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Published: Aug 5, 2018 |