Description
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1700 MHz.
Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift
Table 1. Maximum Ratings Rating
Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Pb-free, RoHS-compliant
Symbol
Value
Unit
VDSS
70
Vdc
VGS
-10 to +10
Vdc
VD.
ITCH16180B2-Innogration.pdf