ITCH16180B4E, ITCH16180B4 - High Power RF LDMOS FET

Innogration

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ITCH16180B4E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	ITCH16180B4E, ITCH16180B4
Manufacturer	Innogration
File Size	1.12 MB
Description	High Power RF LDMOS FET
Datasheet	ITCH16180B4-Innogration.pdf
Note	This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4. Please refer to the document for exact specifications by model.

ITCH16180B4E Product details

Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Optimized for Doherty.

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Published: Aug 5, 2018 |