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ITCH16045A2E - High Power RF LDMOS FET

This page provides the datasheet information for the ITCH16045A2E, a member of the ITCH16045A2 High Power RF LDMOS FET family.

Datasheet Summary

Description

The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz.

It can be used in Class AB/B and Class C for all typical modulation formats.

Typical Performance (On

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 65 Vdc Gate.

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Datasheet preview – ITCH16045A2E

Datasheet Details

Part number ITCH16045A2E
Manufacturer Innogration
File Size 393.12 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16045A2E Datasheet
Additional preview pages of the ITCH16045A2E datasheet.

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH16045A Preliminary Datasheet V2.0 1300-1700MHz, 45W, 28V High Power RF LDMOS FETs Description The ITCH16045A is a 45-watt, input-matched LDMOS FETs, designed for Beidou Global Positioning System and communication/ISM applications with frequencies from 1300 MHz to 1700 MHz. It can be used in Class AB/B and Class C for all typical modulation formats. ITCH16045A2 Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 50 mA, CW. Frequency Gp (dB) P-1dB (W ) D@P-1 (%) 1615 MHz 20 43 64.
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