ITCH16230B2E Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH16230B2 Preliminary Datasheet V1.1 1300MHz-1700MHz, 230W, 28V High Power RF LDMOS FETs Descript.
The ITCH16230B2 is a 230-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
ITCH16230B2E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
Table 1. Maximum Ratings
Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
ITCH16230B2E Applications
* with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16230B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 100 mA,CW. Frequency Gp (dB)
POUT (W )
D@ (%)
1
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