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PTFA212401F Datasheet, Infineon

PTFA212401F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA212401F Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 483.04KB)

PTFA212401F Datasheet
PTFA212401F
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 483.04KB)

PTFA212401F Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted o.

Description

The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or .

Image gallery

PTFA212401F Page 1 PTFA212401F Page 2 PTFA212401F Page 3

TAGS

PTFA212401F
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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