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PTFA212001E Datasheet, Infineon

PTFA212001E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA212001E Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 391.34KB)

PTFA212001E Datasheet
PTFA212001E
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 391.34KB)

PTFA212001E Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted o.

Description

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or .

Image gallery

PTFA212001E Page 1 PTFA212001E Page 2 PTFA212001E Page 3

TAGS

PTFA212001E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

Manufacturer


Infineon (https://www.infineon.com/)

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