logo

PTFA210301E Datasheet, Infineon

PTFA210301E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA210301E Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 188.43KB)

PTFA210301E Datasheet

Features and benefits


* Thermally-enhanced packaging, Pb-free and RoHS-compliant
* Broadband internal matching
* Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average o.

Application

It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provide.

Description

The PTFA210301E is a thermally-enhanced, 30-watt, internally matched GOLDMOS FET intended for WCDMA applications. It is optimized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest ope.

Image gallery

PTFA210301E Page 1 PTFA210301E Page 2 PTFA210301E Page 3

TAGS

PTFA210301E
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts