PTFA210601E fet equivalent, thermally-enhanced high power rf ldmos fet.
include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.
in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted o.
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or e.
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