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PTFA210701F Datasheet, Infineon

PTFA210701F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA210701F Avg. rating / M : 1.0 rating-11

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PTFA210701F Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slott.

Description

The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier applications in the 2110 MHz to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted.

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TAGS

PTFA210701F
Thermally-Enhanced
High
Power
LDMOS
FET
PTFA210701E
PTFA210301E
PTFA210601E
Infineon

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