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PTFA212001F Datasheet, Infineon

PTFA212001F fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA212001F Avg. rating / M : 1.0 rating-11

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PTFA212001F Datasheet

Features and benefits

include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices pro.

Application

in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted o.

Description

The PTFA212001E and PTFA212001F are 200-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or .

Image gallery

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TAGS

PTFA212001F
Thermally-Enhanced
High
Power
LDMOS
FET
Infineon

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