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PTFA212002E Datasheet, Infineon

PTFA212002E fet equivalent, thermally-enhanced high power rf ldmos fet.

PTFA212002E Avg. rating / M : 1.0 rating-12

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PTFA212002E Datasheet

Features and benefits

e, G = gate. 4. Interpret dimensions and tolerances per ASME Y14.5M-1994. 5. Primary dimensions are mm. Alternate dimensions are inches. Find the latest and most complete.

Description

The PTFA212002E is a 200-watt, internally-matched, laterally doublediffused, GOLDMOS push-pull FET. It is characaterized for singleand two-carrier WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation ava.

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TAGS

PTFA212002E
Thermally-Enhanced
High
Power
LDMOS
FET
PTFA212001E
PTFA212001F
PTFA212401E
Infineon

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