2SD557 transistor equivalent, silicon npn power transistor.
*Designed for high power audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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PARAMETER
VALUE
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*High Current Capability
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min.)
*High Collector Power Dissipation
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for.
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