2SD556 transistor equivalent, npn transistor.
*Designed for high power AF amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V (Min)
*Wide Area of Safe Operation
*High Power
*High Current Capability
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*.
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