INCHANGE Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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isc Triacs BTA08-600B FEATURES ·With TO-220AB insulated package ·Suitables for general purpose applications where gate high sensitivity is required.

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isc Silicon NPN Power Transistor KTC2020D DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 60V(Min) ·High Switching Speed ·High Reliability ·Minimum

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isc N-Channel MOSFET Transistor RJ1G08CGN FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Re

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor JCS2N60F ·FEATURES ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche

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isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC3182

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isc Three Terminal Positive Voltage Regulator LM7805 FEATURES ·Output current in excess of 1.0A ·Output voltage of 5V ·Internal thermal overload pro

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isc Silicon NPN Power Transistor INCHANGE Semiconductor NJW0281 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=250V(Min) ·Good Li

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isc Three Terminal Positive Voltage Regulator 78M05 FEATURES ·Output current in excess of 0.5A ·Output voltage of 5V ·Internal thermal overload prot

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isc Silicon NPN Power Transistor MD1802FX DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- : VCEO(SU

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INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching S

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isc Silicon NPN Power Transistor isc Product Specification TIP3055F DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A

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isc Thyristors INCHANGE Semiconductor BT137S-600E DESCRIPTION ·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability

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