*Designed for high speed, high current and high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min)
*High Power Dissipation
*Complement to Type 2SB600
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for high sp.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts