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2SD554 INCHANGE NPN Transistor

Description ·Contunuous Collector Current-IC= 2A ·Power Dissipation-PD=30W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0 V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stag...
Features Power Transistor INCHANGE Semiconductor 2SD554 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A ICEO Collector Cut...

Datasheet PDF File 2SD554 Datasheet - 178.21KB

2SD554  






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