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2SD506 - NPN Transistor

Description

High DC current gain- hFE = 750 (Min) @ IC = 6A Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applicati

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INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD506 DESCRIPTION ·High DC current gain- hFE = 750 (Min) @ IC = 6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 12 A ICM Collector Current-Peak 20 A IB Base Current 0.2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ isc website：www.
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