GSM3612P datasheet, mosfets equivalent, Globaltech

Features and benefits

* 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 2.5V Gate Drive Applications
* Green Device Available
*.

Application

Features
* 30V, 5.3A, RDS(ON)=36mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 2..

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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