GSM3611P datasheet, mosfet equivalent, Globaltech

Features and benefits

* -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V
* Fast switching
* Suit for -2.5V Gate Drive Applications
* Green Device Available
* SOT-23 package design Applic.

Application

Features
* -30V, -4.1A, RDS(ON)=65mΩ@VGS=-10V
* Fast switching
* Suit for -2.5V Gate Drive Applications

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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