GSM2320P datasheet, mosfet equivalent, Globaltech

Features and benefits

* 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1.2V Gate Drive Applications
* Green Device Available
.

Application

Features
* 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1.

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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