GSM2313P datasheet, mosfet equivalent, Globaltech

Features and benefits

* -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Suit for -1.8V Gate Drive Applications
* Green Device Available <.

Application

Features
* -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Suit for.

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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