GSM2309KP Datasheet | Globaltech

Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V - Fast switching - Suit for -4.5V Gate Drive Applications - G-S ESD Protection Diode Embedded - Green Device Available - SOT-23 package design Applications - Notebook - Load Switch - Battery Protection - Hand-held Instruments Packages & Pin Assignments GSM2309KPJZF(SOT-23) 1 Gate 2 Source 3 Drain .gs-power. 1 Ordering Information Part Number GSM2309KPJZF Marking Information Package SOT-23 Quantity Reel 3000 PCS Absolute Maximum Ratings (TA=25ºC unless otherwise...