GSM2309KP datasheet, mosfet equivalent, Globaltech

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datasheet Download (Size : 566.40KB)

Features and benefits

* -30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V
* Fast switching
* Suit for -4.5V Gate Drive Applications
* G-S ESD Protection Diode Embedded
* Green Device Avai.

Application

Features
* -30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V
* Fast switching
* Suit for -4.5V Gate Drive Applications

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.

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