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GSM2302AS - N-Channel MOSFET

General Description

GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V.
  • 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number GSM2302AS
Manufacturer Globaltech
File Size 1.21 MB
Description N-Channel MOSFET
Datasheet download datasheet GSM2302AS Datasheet

Full PDF Text Transcription for GSM2302AS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM2302AS. For precise diagrams, and layout, please refer to the original PDF.

20V N-Channel Enhancement Mode MOSFET Product Description GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low ...

View more extracted text
ET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V „ 20V/2.0A,RDS(ON)=110mΩ@VGS=2.

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