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GSM2318A - N-Channel MOSFET

General Description

GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 40V/2.6A,RDS(ON)=68mΩ@VGS=10V.
  • 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number GSM2318A
Manufacturer Globaltech
File Size 431.54 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM2318A Datasheet

Full PDF Text Transcription for GSM2318A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSM2318A. For precise diagrams, and layout, please refer to the original PDF.

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(O...

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ode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 40V/2.6A,RDS(ON)=68mΩ@VGS=10V „ 40V/2.2A,RDS(ON)=88mΩ@VGS=4.

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