Datasheet Details
| Part number | GSM2313P |
|---|---|
| Manufacturer | Globaltech |
| File Size | 585.09 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 GSM2313P Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V.
- Improved dv/dt capability.
- Fast switching.
- Suit for -1.8V Gate Drive.