GSM2308AP mosfet equivalent, n-channel mosfet.
* 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* SOT-23 package des.
Features
* 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS gua.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
Image gallery
TAGS
Download (Size : 521.66KB)