GSM2309S mosfet equivalent, 20v p-channel enhancement mode mosfet.
* -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications
App.
Features
* -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Green Devi.
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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