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GSM2307P - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number GSM2307P
Manufacturer Globaltech
File Size 539.35 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM2307P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM2307P 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5 „ Improved dv/dt capability „ Fast switching „ Suit for -1.
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