GSM2220Y mosfet equivalent, dual n-channel mosfet.
* 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V
* Fast switching
* Suit for 1.5V Gate Drive Applications
* Green Device Available
* SOT-563 package design
Applic.
Packages & Pin Assignments
GSM2220YX7F (SOT-563)
Features
* 20V, 800mA, RDS(ON)=300mΩ@VGS=4.5V
* Fast switchin.
These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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