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GSM2120Y - N+P Dual-Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V.
  • P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V.
  • Fast switching.
  • Suit for 1.5V/-1.5V Gate Drive.

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Datasheet Details

Part number GSM2120Y
Manufacturer Globaltech
File Size 810.79 KB
Description N+P Dual-Channel MOSFET
Datasheet download datasheet GSM2120Y Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM2120Y 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V „ P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V „ Fast switching „ Suit for 1.5V/-1.
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