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GSM2130JZF - 20V N-Channel MOSFET

General Description

GSM2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number GSM2130JZF
Manufacturer Globaltech
File Size 465.79 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet GSM2130JZF Datasheet

Full PDF Text Transcription for GSM2130JZF (Reference)

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GSM2130JZF 20V N-Channel MOSFET Product Description GSM2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate ...

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ses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features ◼ 20V/5.4A, RDS(ON)=30mΩ@VGS=4.

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