Full PDF Text Transcription for GSM2120Y (Reference)
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GSM2120Y. For precise diagrams, and layout, please refer to the original PDF.
GSM2120Y 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This ad...
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wer field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V Fast switching Suit for 1.5V/-1.
GSM2120Y Datasheet
