Full PDF Text Transcription for GSM2120P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
GSM2120P. For precise diagrams, and layout, please refer to the original PDF.
GSM2120P 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This ad...
View more extracted text
wer field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V Fast switching Suit for 1.5V/-1.
GSM2120P Datasheet
