Datasheet Details
| Part number | GSM2151E |
|---|---|
| Manufacturer | Globaltech |
| File Size | 558.26 KB |
| Description | 25V P-Channel Enhancement Mode MOSFET |
| Datasheet |
 GSM2151E Datasheet
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General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -25V, -4.3A, RDS(ON)=50mΩ@VGS=-10V.
- Fast switching.
- Suit for -4.5V Gate Drive.