GSM2219Y mosfet equivalent, dual p-channel mosfet.
* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V
* Fast switching
* Suit for -1.5V Gate Drive Applications
* Green Device Available
* SOT-563 package design
Ap.
Packages & Pin Assignments
GSM2219YX7F (SOT-563)
Features
* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V
* Fast switc.
These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high e.
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