GSM2120P mosfet equivalent, n+p dual-channel mosfet.
* N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V
* Fast switching
* Suit for 1.5V/-1.5V Gate Drive Applicati.
Features
* N-Channel 20V, 0.8A, RDS(ON)=300mΩ@VGS=4.5V
* P-Channel -20V, -0.4A, RDS(ON)=600mΩ@VGS=-4.5V
* .
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high.
Image gallery
TAGS
+P
Download (Size : 812.50KB)