GSM2130JZF datasheet, mosfet equivalent, Globaltech

Features and benefits

* 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

Application

Features
* 20V/5.4A, RDS(ON)=30mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* E.

Description

GSM2130JZF, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other .

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