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MW6S010GNR1 - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Download the MW6S010GNR1 datasheet PDF. This datasheet also covers the MW6S010NR1 variant, as both devices belong to the same lateral n-channel broadband rf power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

Part Number 2743019447 100B470JP500X T491D226K035AS 13668221 CDR33BX104AKWS 272915L 100B240JP500X 100B6R8JP500X 100B7R5JP500X A04T- 5 CRCW12061001F100 Manufacturer Fair- Rite ATC Kemet Phillips Kemet Johanson ATC ATC ATC Coilcraft Vishay - Dale MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semico

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • On - Chip RF Feedback for Broadband Stability www. DataSheet4U. com.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • 200°C Capable Plastic Package.
  • N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW6S010NR1_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MW6S010NR1 RF Power Field Effect Transistors NXP
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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
MW6S004NT1 RF Power Field Effect Transistor
MW6IC2015GNBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2015NBR1 RF LDMOS Wideband Integrated Power Amplifiers
MW6IC2240GNBR1 RF LDMOS Wideband Integrated Power Amplifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability www.DataSheet4U.