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Freescale Semiconductor Electronic Components Datasheet

MW6S010GNR1 Datasheet

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ =
125 mA, Pout = 10 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 32%
IMD — - 37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
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Feedback for Broadband Stability
to a Maximum of 32 VDD Operation
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010N
Rev. 3, 5/2006
MW6S010NR1
MW6S010GNR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MW6S010NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MW6S010GNR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
1


Freescale Semiconductor Electronic Components Datasheet

MW6S010GNR1 Datasheet

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

No Preview Available !

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A
Machine Model (per EIA/JESD22 - A115)
A
Charge Device Model (per JESD22 - C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1 260
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
10
Zero Gate Voltage Drain Leakage Current
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IDSS
1
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
1
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.3
3
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 125 mAdc)
VGS(Q)
3.1
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 0.3 Adc)
VDS(on)
0.27 0.35
Dynamic Characteristics
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss — 23 —
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
10
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 0.32 —
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz,
Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps 17.5 18 20.5
Drain Efficiency
ηD 31 32 —
Intermodulation Distortion
IMD — - 37 - 33
Input Return Loss
IRL — - 18 - 10
Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP,
420- 470 MHz, Two - Tone Test, 100 kHz Tone Spacing
Power Gain
Gps — 20 —
Drain Efficiency
ηD — 33 —
Intermodulation Distortion
IMD — - 40 —
Input Return Loss
IRL — - 10 —
Unit
°C
Unit
μAdc
μAdc
μAdc
Vdc
Vdc
Vdc
pF
pF
pF
dB
%
dBc
dB
dB
%
dBc
dB
MW6S010NR1 MW6S010GNR1
2
RF Device Data
Freescale Semiconductor


Part Number MW6S010GNR1
Description LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
Maker Freescale Semiconductor
Total Page 20 Pages
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