FDT457N mosfet equivalent, n-channel mosfet.
5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability i.
such as notebook computer power management, battery powered circuits, and DC motor control.
Features
5 A, 30 V. RDS(ON).
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