FDS5351 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
* Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
* High performance trench technology for extr.

Description

* Max rDS(on) = 35mΩ at VGS = 10V, ID = 6.1A
* Max rDS(on) = 42mΩ at VGS = 4.5V, ID = 5.5A
* High performance trench technology for extremely low rDS(on)
* 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconduc.

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