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FDS5690 - N-Channel MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

  • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
  • Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDS5690 March 2000 FDS5690 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. • • • • Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
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