FDS5690
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
- 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V.
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Low gate charge (23n C typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications
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DC/DC converter Motor drives
5 6 7
4 3 2 1
SO-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
TA = 25°C unless otherwise noted
Parameter
Ratings
(Note 1a)
Units
±20 7 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note...
