* 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V
* High performance trench technology for extremely low RDS(ON)
* High power and cur.

* Synchronous rectifier
* DC/DC converter Features
* 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 1.

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, provi.

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