Datasheet Details
| Part number | FDS5170N7 |
|---|---|
| Manufacturer | Fairchild (onsemi) |
| File Size | 195.43 KB |
| Description | 60V N-Channel PowerTrench MOSFET |
| Datasheet |
 FDS5170N7 Datasheet
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Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
- 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V.
- High performance trench technology for extremely low RDS(ON).
- High power and current handling capability.
- Fast switching, low gate charge (51nC typical).
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size Bottom-side 5 Drain Contact 6 7 8 4 3 2 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDSS VGSS ID Drain-Sou.