FDS5170N7
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Applications
- Synchronous rectifier
- DC/DC converter
Features
- 10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 6.0 V
- High performance trench technology for extremely low RDS(ON)
- High power and current handling capability
- Fast switching, low gate charge (51n C typical)
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Bottom-side
5 Drain Contact
4 3 2 1
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
Parameter
VDSS VGSS ID
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
(Note 1a)
PD TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and...
