FDS5672 mosfet equivalent, n-channel mosfet.
* rDS(ON) = 10mΩ, VGS = 10V, ID = 12A
* rDS(ON) = 14mΩ, VGS = 6V, ID = 10A
* High performance trench technology for extremely low
rDS(ON)
* Low gate charg.
* DC/DC converters
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SO-8
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©2005 Fairchild Semiconductor Corporation
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This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.
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