FDS5672 Datasheet | Fairchild Semiconductor

Features - r DS(ON) = 10mΩ, VGS = 10V, ID = 12A - r DS(ON) = 14mΩ, VGS = 6V, ID = 10A - High performance trench technology for extremely low r DS(ON) - Low gate charge - High power and current handling capability General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed. Applications - DC/DC converters Branding Dash 5 1 2 3 4 SO-8 ©2005 Fairchild Semiconductor Corporation FDS5672 Rev. A .fairchildsemi. FDS5672 N-Channel Power Trench® MOSFET MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25 o C, VGS = 10V, RθJA = 50o C/W) Continuous (TC = 25 o C, VGS = 6V, RθJA = 50o C/W) Pulsed Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25o C TJ, TSTG Operating and Storage...