FDS5670 Datasheet | Fairchild Semiconductor

August 1999 60V N-Channel Power Trench TM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V. • • • • Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. 5 6 4 3 2 1 SO-8 Symbol VDSS VGSS ID PD 7 8 TA = 25°C unless otherwise...