FDS5670
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with parable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features
10 A, 60 V. RDS(ON) = 0.014 Ω @ VGS = 10 V RDS(ON) = 0.017 Ω @ VGS = 6 V.
Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
5 6 4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
7 8
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed
Parameter
Ratings
(Note 1a)
Units
±20 10 50 2.5 1.2 1 -55 to +150
Power...
