FDS5690 mosfet equivalent, 60v n-channel power mosfet.
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
*
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
has been especially tail.
where fast switching are required.
low
in-line
power
loss
and
* High performance trench technology for extremel.
Features
This N-Channel MOSFET is produced using Semiconductor's advanced PowerTrench process
ON that
*
7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V
has been especially tailored to minimize on-state
RDS(on) = 0.033 Ω @ VGS = 6 V.
resistance .
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