FDS5680
Description
This N-Channel MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Key Features
- S A, -60 V. RDS(ON) = 0.020 mW @ VGS = 10 V RDS(ON) = 0.025 mW @ VGS = 6 V
- Low Gate Charge (30 nC typical)
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Device is Pb-Free and Halide Free
