FDS5680 mosfet equivalent, n-channel mosfet.
* S A, −60 V.
RDS(ON) = 0.020 mW @ VGS = 10 V
RDS(ON) = 0.025 mW @ VGS = 6 V
* Low Gate Charge (30 nC typical)
* Fast Switching Speed
* High Perform.
where low in−line power loss and fast switching are required.
Features
* S A, −60 V.
RDS(ON) = 0.020 mW @ VGS = 1.
This N−Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 233.11KB)